Wydział Chemii

M. Laupretre

C. Symonds

J.-M. Benoit

Ł. Duda

K. Czyż

M. Guzik

E. Cleyet-Merle

M. Morassi

F. Bessueille

A. Pereira

A. Lemaître

J. Bellessa

2025

Applied Physics Letters

127

151104/1-151104/4

10.1063/5.0300617

Naukowa

Angielski

Artykuł

This work demonstrates the realization of an electrically driven Tamm laser diode based on the integration of a silver microdisk with a quantum-well-embedded distributed Bragg reflector (GaAs/AlAs). Tamm plasmon modes, confined at the interface between a silver film and a GaAs/AlAs distributed Bragg Reflector, enable surface-bound lasing with tailored spatial and spectral characteristics while preserving the integrity of the underlying semiconductor structure. The device comprises a patterned silver contact, enabling localized current injection into the active region formed by InGaAs quantum wells located at the maxima of the mode electric field. Under cryogenic conditions (95 K), the laser demonstrates a threshold current of 1.25 mA (4.4 kA/cm²), with a maximum emitted power of 200 μW at 906 nm. Spectral measurements reveal strong-to-weak coupling transition, the onset of optical gain, and mode confinement, culminating in lasing with angular and spectral narrowing. The emission properties are further validated by dispersion imaging, confirming lasing from the fundamental confined Tamm mode.

Semiconductor structures, Plasmons, Semiconductor materials, Emission spectroscopy, Optical properties, Quantum wells, Lasers

http://dx.doi.org/10.1063/5.0300617

https://www.aip.org/