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Influence of the internal bias field on the movement of the domain walls in (CH3NH3)5Bi2Cl11 crystals.
Autorzy
Rok wydania
1997
Czasopismo
Numer woluminu
190
Strony
25-30
DOI
10.1080/00150199708014088
Kolekcja
Język
Angielski
Typ publikacji
Artykuł
The effect of internal bias field on the field - induced movement of the domain walls in (CH 3 NH 3)5 Bi 2 Br 11 crystals has been investigated using liquid crystal decoration technique (NLC). The measurements were carried out in dc - electric field and alternate square pulses of electric fields. Comparison was made of the nucleation process in (CH 3 NH 3)5 Bi 2 Br 11 and TGS crystals. The difference was explained in terms of difference of activation energy for domain wall motion.
Słowa kluczowe
Ferroelectric domain, nucleation, bias field, (CH 3 NH 3)5 Bi 2 Br 11, TGS
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